当前“
氮化镓晶体管(GaN HEMT)
”共 2件相关商品品牌
- Ampleon(安谱隆)
- BeRex
- ChipNobo(无边界)
- EPC
- GaN systems
- GOSEMICON(顾邦半导体)
- Grenergy(南京绿芯)
- HXY MOSFET(华轩阳电子)
- Innoscience(英诺赛科)
- MACOM
- MTC(美禄)
- NXP(恩智浦)
- PN Junction
- RealChip(正芯半导体)
- Rochester Electronics(罗彻斯特)
- Tagore
- TI(德州仪器)
- Tokmas(托克马斯)
- Transphorm
- WAVEPIA
- Wolfspeed
- Wuxi Maxinmicro(无锡明芯微)
- 誉鸿锦
封装/规格
- -
- 440117
- BGA-4
- BGA-6
- BGA-9
- DFN(5x6)
- DFN(8x8)
- DFN-10(6x8)
- DFN-3(5x6)
- DFN-3(8x8)
- DFN-4(9.8x10.4)
- DFN-6(2x2)
- DFN-6(6.5x7)
- DFN-7(1.6x3.5)
- DFN-8(5x6)
- DFN-8(8x8)
- DFN-9(8x8)
- Die-11(1.6x4.1)
- NI-780S-4L
- NI-780S-4S2S
- PG-ULGA-4(7x8.4)
- QFN-3(5x6)
- QFN-3(8x8)
- QFN-52(12x12)
- SMD
- SMD,2.1x0.9mm
- SMD-30P
- SMD_3.25x3.25
- SOP-8
- SOT-1227A
- SOT-1227B
- SOT-1228A
- SOT-1826-1
- SOT-1828-3
- SOT-467B
- SOT-467C
- SOT-502A
- TO-220
- TO-220F
- TO-247 已显示前 40 项，共 45 项，请输入关键词搜索
沟道类型
- -
- 1个N沟道
漏源击穿电压(Vds)
- -
- 600V
- 650V
- 900V
连续漏极电流(Id)
- 3.6A
- 4.8A
- 6.5A
- 7A
- 7.9A
- 8A
- 10A
- 12A
- 13A
- 16A
- 17A
- 20A
- 25A
- 34A
- 35A
- 36A
- 46.5A
- 47.2A
- 50A
- 93A
耗散功率(Pd)
- -
- 13.2W
- 21W
- 25W
- 32W
- 38W
- 39W
- 52W
- 55.5W
- 75W
- 78W
- 96W
- 113W
- 119W
- 125W
- 150W
- 156W
- 178W
- 187W
- 266W
阈值电压(Vgs(th))
- -
- 1.6V
- 1.7V
- 1.9V
- 2.1V
- 2.2V
- 2.5V
- 4V
栅极电荷量(Qg)
- -
- 0.9nC
- 1.35nC
- 2nC
- 2.3nC
- 3.3nC
- 7nC
- 7.2nC
- 8nC
- 9nC
- 9.6nC
- 10nC
- 12nC
导通电阻(RDS(on))
- 18mΩ@10V
- 41mΩ@8V
- 41mΩ@10V
- 60mΩ@10V
- 62mΩ@8V
- 63mΩ@10V
- 85mΩ@10V
- 100mΩ@10V
- 110mΩ@10V
- 150mΩ@10V
- 150mΩ@6V
- 160mΩ@6V
- 160mΩ@10V
- 165mΩ@10V
- 180mΩ@8V
- 240mΩ@8V
- 240mΩ@10V
- 270mΩ@10V
- 300mΩ@6V
- 365mΩ@6V
- 480mΩ@8V
- 560mΩ@8V
- 600mΩ@10V
输入电容(Ciss)
- -
- 34pF
- 46pF
- 73pF
- 83pF
- 125pF
- 239pF
- 243pF
- 505pF
- 598pF
- 760pF
输出电容(Coss)
- -
- 27pF
- 29pF
反向传输电容(Crss)
- -
- 0.2pF
- 0.4pF
- 0.5pF
- 0.7pF
- 0.8pF
- 1pF
- 1.4pF
- 1.5pF
- 2pF
工作温度
- -
- -55℃~+150℃
- -55℃~+175℃
- -50℃~+150℃
技术路线
- -
包装/方式
- 托盘
- 盒装
- 管装
- 编带
- 袋装
筛选结果：
2
